JPS5825231A - 電子線露光によるマスク製造方法 - Google Patents

電子線露光によるマスク製造方法

Info

Publication number
JPS5825231A
JPS5825231A JP56116215A JP11621581A JPS5825231A JP S5825231 A JPS5825231 A JP S5825231A JP 56116215 A JP56116215 A JP 56116215A JP 11621581 A JP11621581 A JP 11621581A JP S5825231 A JPS5825231 A JP S5825231A
Authority
JP
Japan
Prior art keywords
electron beam
mask
exposure
photosensitive material
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56116215A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219965B2 (en]
Inventor
Teruaki Okino
輝昭 沖野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Jeol Ltd
Nihon Denshi KK
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK, Nippon Telegraph and Telephone Corp filed Critical Jeol Ltd
Priority to JP56116215A priority Critical patent/JPS5825231A/ja
Publication of JPS5825231A publication Critical patent/JPS5825231A/ja
Publication of JPH0219965B2 publication Critical patent/JPH0219965B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
JP56116215A 1981-07-24 1981-07-24 電子線露光によるマスク製造方法 Granted JPS5825231A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56116215A JPS5825231A (ja) 1981-07-24 1981-07-24 電子線露光によるマスク製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56116215A JPS5825231A (ja) 1981-07-24 1981-07-24 電子線露光によるマスク製造方法

Publications (2)

Publication Number Publication Date
JPS5825231A true JPS5825231A (ja) 1983-02-15
JPH0219965B2 JPH0219965B2 (en]) 1990-05-07

Family

ID=14681678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56116215A Granted JPS5825231A (ja) 1981-07-24 1981-07-24 電子線露光によるマスク製造方法

Country Status (1)

Country Link
JP (1) JPS5825231A (en])

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267988A (en) * 1975-12-04 1977-06-06 Matsushita Electric Ind Co Ltd Throuch-hole formation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267988A (en) * 1975-12-04 1977-06-06 Matsushita Electric Ind Co Ltd Throuch-hole formation method

Also Published As

Publication number Publication date
JPH0219965B2 (en]) 1990-05-07

Similar Documents

Publication Publication Date Title
US3673018A (en) Method of fabrication of photomasks
JPS5825231A (ja) 電子線露光によるマスク製造方法
JP2003121989A (ja) ハーフトーン型位相シフトマスクの修正方法
JPS6043827A (ja) 微細パタ−ンの形成方法
JPS60235422A (ja) マスクパタ−ンの欠陥修正方法
JPS6053872B2 (ja) 遮光性マスクの修正方法
JPS602956A (ja) フオトマスクの製造方法
JPH02115842A (ja) ホトマスク欠陥の修正方法
JPS60254729A (ja) マスク基板上のマスクパタ−ンの修正方法
JPS63218959A (ja) ホトマスクパタ−ンの修正方法
JPH0440456A (ja) フォトマスクの製造方法
JPS60231331A (ja) リフトオフ・パタ−ンの形成方法
JPS63128348A (ja) マスク修正方法
JPS6236823A (ja) レジストパタ−ン形成方法
JPS6163029A (ja) クロムマスクの修正方法
JPS58184146A (ja) マスク基板の製造方法
JPS6228463B2 (en])
JPS63288020A (ja) 電極作成方法
JPH01154060A (ja) フォトマスクの製造方法
JPS63246745A (ja) ホトマスクの作製方法
JPS61111526A (ja) マスクパタ−ンの欠陥修正方法
JPS6161161A (ja) フオトマスクの製造方法
JPH03156458A (ja) フォトマスク
JPS5841765B2 (ja) フオトマスク材の傷修復方法
JPH02166448A (ja) パターン修正方法